A NAND Flash Memory Controller for SD/MMC Flash Memory Card
نویسندگان
چکیده
منابع مشابه
Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
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Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,...
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NAND-flash storage is a preferred method to accelerate I/O intensive applications because of its high throughput and fast random-read performance. However, the high cost per GB of flash, relative to magnetic disks, prevents large datacenters from moving their data entirely onto the flash media. Normally, limited amounts of flash is used “in front of” magnetic storage to speed up accesses to the...
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Features • Single-level cell (SLC) technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks • READ performance – Random READ: 25μs (MAX) – Sequential READ: 25ns (MIN) • WRITE performance – PROGRAM PAGE: 220μs (TYP) – BLOCK ERASE: 1.5ms (TYP...
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ژورنال
عنوان ژورنال: IEEE Transactions on Magnetics
سال: 2007
ISSN: 0018-9464
DOI: 10.1109/tmag.2006.888520